The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Dec. 10, 2021
Nanya Technology Corporation, New Taipei, TW;
Wei-Chuan Fang, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present disclosure provides a method for preparing a semiconductor structure using the hardmask structure. The method includes forming a conductive layer on a substrate; forming a first ashable hardmask layer on the conductive layer; forming a first anti-reflection coating on the first ashable hardmask layer; forming a second ashable hardmask layer on the first anti-reflection coating, wherein a modulus of the first ashable hardmask layer is greater than a modulus of the second ashable hardmask layer; etching the first ashable hardmask layer, the first anti-reflection coating, and the second ashable hardmask layer to transfer a first pattern to at least the first ashable hardmask layer; and etching the conductive layer according to the first ashable hardmask layer to form a patterned conductive layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile