The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Feb. 28, 2022
Applicant:

Hrl Laboratories, Llc, Malibu, CA (US);

Inventors:

Shanying Cui, Calabasas, CA (US);

Xin N. Guan, Monterey Park, CA (US);

Adam F. Gross, Santa Monica, CA (US);

Florian G. Herrault, Agoura Hills, CA (US);

Assignee:

HRL Laboratories, LLC, Malibu, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01F 1/34 (2006.01); H01F 10/20 (2006.01); H01F 10/28 (2006.01); H01F 10/30 (2006.01); H01F 41/24 (2006.01); H01P 1/36 (2006.01); H01P 1/38 (2006.01);
U.S. Cl.
CPC ...
H01F 1/348 (2013.01); H01F 10/205 (2013.01); H01F 10/28 (2013.01); H01F 10/30 (2013.01); H01F 41/24 (2013.01); H01P 1/36 (2013.01); H01P 1/38 (2013.01);
Abstract

Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFeO) and/or strontium hexaferrite (SrFeO). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.


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