The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Feb. 02, 2023
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Shinji Tanaka, Tokyo, JP;

Yohei Sawada, Tokyo, JP;

Masao Morimoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); G11C 5/14 (2006.01); G11C 7/06 (2006.01); G11C 15/04 (2006.01);
U.S. Cl.
CPC ...
G11C 15/04 (2013.01); G11C 5/148 (2013.01);
Abstract

A semiconductor device includes a memory array having a plurality of associative memory cells arranged in a matrix form for storing entries. The memory array is divided into a plurality of memory blocks for sequentially performing a retrieval operation along a column direction, and further includes a plurality of match lines corresponding to the respective memory blocks and provided correspondingly to each memory cell row, a plurality of search lines corresponding to the respective memory blocks and provided correspondingly to each memory cell column, and a plurality of match amplifiers corresponding to the respective memory blocks and provided to the plurality of match lines. The match line provided correspondingly to the preceding memory block is set to become shorter than the match line provided correspondingly to the subsequent memory block. The memory array further includes a timing control unit for controlling timing for driving the search line of the subsequent memory block based on a length of the match line provided correspondingly to the preceding memory block.


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