The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Jan. 03, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Buil Jung, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/408 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 11/4087 (2013.01); H10B 12/315 (2023.02); H10B 12/34 (2023.02);
Abstract
A memory device includes a memory cell array including a plurality of memory cells, a sub word line driver block including a plurality of sub word line drivers configured to output word line signals, which are respectively provided to the plurality of memory cells, and a row decoder configured to generate word line enable signals, which are respectively provided to the plurality of memory cells. Each of the memory cells includes a cell transistor including dual gates, and a capacitor connected to the cell transistor. A word line enable signal applied by the row decoder is connected to one of the dual gates.