Parallel mask rule checking on evolving mask shapes in optical proximity correction flows

Abstract

Embodiments of the present disclosure relate to parallel mask rule checking on evolving mask shapes in optical proximity correction (OPC) flows for integrated circuit designs. Systems and methods are disclosed that perform mask (manufacturing) rule checks (MRC) in parallel, sharing information to maintain symmetry when violations are corrected. In an embodiment the shared information is also used to minimize changes to the geometric area of proposed mask shapes resulting from the OPC. In contrast to conventional systems, MRC is performed for multiple edges in parallel, sharing information between the different edges to encourage symmetry. In an embodiment, all edges may be adjusted in parallel to reduce mask-edge traversal bias.