The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Mar. 27, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jihun Jung, Suwon-si, KR;
Kyeonghwan Jung, Suwon-si, KR;
Changhyeon Chae, Suwon-si, KR;
Jaeook Kwon, Suwon-si, KR;
Jusun Song, Suwon-si, KR;
Jaehoon Jeong, Suwon-si, KR;
Youngho Choi, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A memory operation device and method for operating a memory in an electronic device. The electronic device may determine whether a memory leak occurs in one or more low-order stack trace items with a count value of n among collected stack trace items, n being a positive integer, and, based on a low-order stack trace item among the collected stack trace items being determined as causing a memory leak, proceeding to a next order of the collected stack trace items to thereby determine whether a memory leak occurs in one or more high-order stack trace items with a count value of m which is a positive integer higher than n). When m is a maximum count value among the collected stack trace items, memory debugging may be performed using a high-order stack trace item, among the one or more high-order stack trace items, causing the memory leak.