The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Jun. 29, 2022
Nanjing University of Posts and Telecommunications, Nanjing, CN;
NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS, Nanjing, CN;
Abstract
A monolithic optoelectronic integrated circuit is provided, including: a substrate including photonic integrated device region and a peripheral circuit region; a first GaN-based multi-quantum well optoelectronic PN-junction device including a first P-type ohmic contact electrode and a first N-type ohmic contact electrode; and a first GaN-based field-effect transistor, where the first GaN-based field-effect transistor includes a first gate dielectric layer disposed on the surface of the substrate and having a first recess, a first gate filled within the first recess, and a first source and a first drain that are disposed the opposite sides of the first gate, where the first source is electrically connected to the first P-type ohmic contact electrode, the first drain is configured to be electrically connected to a first potential.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile