The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Dec. 12, 2022
Applicants:

Schott Ag, Mainz, DE;

Schott Technical Glass Solutions Gmbh, Jena, DE;

Inventors:

Ruediger Dietrich, Jena, DE;

Bernd Ruedinger, Woerrstadt, DE;

Meike Schneider, Taunusstein, DE;

Jochen Alkemper, Klein-Winternheim, DE;

Lars Mueller, Wiesbaden, DE;

Thomas Pfeiffer, Ingelheim, DE;

Julian Koch, Mainz, DE;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 10/00 (2006.01); C03B 32/02 (2006.01); C03C 3/083 (2006.01); C03C 3/085 (2006.01); C03C 3/087 (2006.01); C03C 21/00 (2006.01);
U.S. Cl.
CPC ...
C03C 10/0027 (2013.01); C03B 32/02 (2013.01); C03C 3/083 (2013.01); C03C 3/085 (2013.01); C03C 3/087 (2013.01); C03C 10/0009 (2013.01); C03C 10/0054 (2013.01); C03C 21/002 (2013.01); C03C 2201/50 (2013.01); C03C 2203/20 (2013.01); C03C 2203/50 (2013.01); C03C 2204/00 (2013.01);
Abstract

A cover glass is provided that includes a silica based glass ceramic with a thickness between 0.4 mm and 0.85 mm. The glass ceramic has a transmittance of more than 80% from 380 nm to 780 nm and a stress attribute selected from: an overall compressive stress (CS) of at least 250 MPa and at most 1500 MPa, a compressive stress at a depth of 30 μm (CS30) from one of the two faces of at least 160 MPa and at most 525 MPa, a depth of the compression layer (DoCL) of at least 0.2 times the thickness and less than 0.5 times the thickness, and any combinations thereof. The glass ceramic has at least one silica based crystal phase having in a near-surface layer a unit cell volume of at least 1% by volume larger than that of a core where the crystal phase has minimum stresses.


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