The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Jun. 11, 2019
Applicant:
Wacker Chemie Ag, Munich, DE;
Inventors:
Assignee:
Wacker Chemie AG, Munich, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/035 (2006.01); C01B 33/02 (2006.01); C01B 33/021 (2006.01); C01B 33/027 (2006.01); C01B 33/03 (2006.01);
U.S. Cl.
CPC ...
C01B 33/035 (2013.01); C01B 33/02 (2013.01); C01B 33/021 (2013.01); C01B 33/027 (2013.01); C01B 33/03 (2013.01);
Abstract
A method for producing polycrystalline silicon includes introducing a reaction gas, which in addition to hydrogen contains silane and/or at least one halosilane, into a reaction space of a gas phase deposition reactor. The reaction space includes at least one heated filament rod upon which by deposition silicon is deposited to form a polycrystalline silicon rod. During the deposition, the the morphology of the silicon rod is determined.