The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Feb. 10, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
President and Fellows of Harvard College, Cambridge, MA (US);
Minhyun Lee, Suwon-si, KR;
Houk Jang, Cambridge, MA (US);
Donhee Ham, Cambridge, MA (US);
Chengye Liu, Cambridge, MA (US);
Henry Hinton, Cambridge, MA (US);
Haeryong Kim, Seongnam-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
President and Fellows Of Harvard College, Cambridge, MA (US);
Abstract
A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.