The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12268092 B1

Date of Patent:

Apr. 01, 2025

Filed:

May. 04, 2022

Photoelectric conversion element, imaging element, optical sensor, material for photoelectric conversion element, and compound

Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Naoyuki Hanaki, Kanagawa, JP;

Tomoaki Yoshioka, Kanagawa, JP;

Assignee:

FUJIFILM Corporation, Tokyo, JP;

Attorney:

JCIPRNET

Primary Examiner:

Vu A Vu

Int. Cl.

CPC ...

C07D 493/04 (2006.01); C07D 495/04 (2006.01); H10K 85/60 (2023.01); H10K 30/00 (2023.01); H10K 39/32 (2023.01);

U.S. Cl.

CPC ...

H10K 85/6576 (2023.02); C07D 493/04 (2013.01); C07D 495/04 (2013.01); H10K 85/626 (2023.02); H10K 85/6574 (2023.02); H10K 30/00 (2023.02); H10K 39/32 (2023.02);

Abstract

The present invention is to provide a photoelectric conversion element having an excellent photoelectric conversion efficiency and responsiveness after heating over time. In addition, the present invention is to provide an imaging element, an optical sensor, a material for a photoelectric conversion element, and a compound. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) and an n-type semiconductor material.

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