The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Oct. 29, 2020
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventor:

Huilong Zhu, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6713 (2025.01); H10D 30/6757 (2025.01); H10D 64/021 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/0147 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01);
Abstract

The present disclosure provides a semiconductor device and a method of manufacturing the same thereof, and an electronic apparatus including the semiconductor device. According to embodiments of the present disclosure, the semiconductor device includes a channel portion, source/drain portions connected to the channel portion on two opposite sides of the channel portion, and a gate stack intersecting with the channel portion. The channel portion includes a first portion extending in a vertical direction with respect to a substrate and a second portion extending from the first portion to two opposite sides in a lateral direction with respect to the substrate, respectively.


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