The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Oct. 05, 2022
Globalfoundries Dresden Module One Limited Liability Company & Co. KG, Dresden, DE;
Stefan Dünkel, Dresden, DE;
Dominik Martin Kleimaier, Dresden, DE;
Zhixing Zhao, Dresden, DE;
Halid Mulaosmanovic, Dresden, DE;
Abstract
Structures including a ferroelectric field-effect transistor and methods of forming a structure including a ferroelectric field-effect transistor. The structure comprises a semiconductor substrate, a semiconductor layer, a dielectric layer arranged between the semiconductor layer and the semiconductor substrate, and first and second wells in the semiconductor substrate. The first well has a first conductivity type, and the second well has a second conductivity type opposite to the first conductivity type. A ferroelectric field-effect transistor comprises a gate structure on the semiconductor layer over the first well and the second well. The gate structure includes a ferroelectric layer comprising a ferroelectric material.