The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Aug. 19, 2020
Applicant:
Pragmatic Semiconductor Limited, Cambridge, GB;
Inventor:
Richard Price, Sedgefield, GB;
Assignee:
PRAGMATIC SEMICONDUCTOR LIMITED, Cambridge, GB;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/47 (2025.01); H01C 1/01 (2006.01); H01C 1/14 (2006.01); H01C 7/00 (2006.01); H01C 17/00 (2006.01); H01C 17/075 (2006.01); H01C 17/28 (2006.01); H01L 21/02 (2006.01); H10D 8/60 (2025.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01); H10D 84/00 (2025.01); H10D 84/02 (2025.01); H10D 84/80 (2025.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 86/80 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 1/474 (2025.01); H01C 1/01 (2013.01); H01C 1/14 (2013.01); H01C 7/006 (2013.01); H01C 17/003 (2013.01); H01C 17/075 (2013.01); H01C 17/28 (2013.01); H01L 21/02565 (2013.01); H10D 1/47 (2025.01); H10D 8/60 (2025.01); H10D 30/6755 (2025.01); H10D 30/6757 (2025.01); H10D 62/80 (2025.01); H10D 84/02 (2025.01); H10D 84/204 (2025.01); H10D 84/811 (2025.01); H10D 86/0221 (2025.01); H10D 86/423 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10D 86/80 (2025.01); H10D 99/00 (2025.01);
Abstract
A thin-film integrated circuit comprising a first semiconductor device, a second semiconductor device, a first resistor, and a second resistor is provided. A semiconducting region of the first semiconductor device, a resistor body of the first resistor, a semiconducting region of the second semiconductor device, and a resistor body of the second resistor are formed from at least one of a first source material and a second source material, and a material of the resistor body of the first resistor and a material of the resistor body of the second resistor have different electrical properties.