The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

May. 31, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Bosuk Kang, Seoul, KR;

Joonhee Lee, Seongnam-si, KR;

Seonghun Jeong, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11575 (2017.01); H10B 41/27 (2023.01); H10B 41/50 (2023.01); H10B 43/27 (2023.01); H10B 43/50 (2023.01);
U.S. Cl.
CPC ...
H10B 43/50 (2023.02); H10B 41/27 (2023.02); H10B 41/50 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor device includes a substrate having a first region and a second region, gate electrodes spaced apart from each other in a first direction, perpendicular to an upper surface of the substrate, and extend in a second direction, and have different lengths on the second region, channel structures that penetrate the gate electrodes, extend in the first direction, and respectively include a channel layer on the first region, support structures that penetrate the gate electrodes and extend in the first direction on the second region, and a separation region that penetrates the gate electrodes and extend in the second direction. The substrate has a recess region that overlaps the separation region in the first direction and extends downward from an upper surface in the second region, adjacent to the first region. The separation region has a protrusion that protrudes downward to correspond to the recess region.


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