The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Sep. 09, 2022
Ambarella International Lp, Santa Clara, CA (US);
Yueh Chun Cheng, Cupertino, CA (US);
Ambarella International LP, Santa Clara, CA (US);
Abstract
An adaptive-bias metal-oxide-semiconductor (MOS) device comprises a first terminal, a second terminal, a third terminal, a first MOS device, and a second MOS device. The first MOS device generally may have a first width and a first gate length. The second MOS device generally may have a second width and a second gate length. The first terminal may be connected to a first source terminal of the first MOS device and a second source terminal of the second MOS device. The second terminal may be connected to a first drain terminal of the first MOS device, a first gate terminal of the first MOS device, and a second gate terminal of the second MOS device. The third terminal may be connected to a second drain terminal of the second MOS device. The first MOS device and the second MOS device are generally configured to operate in a sub-threshold operating region.