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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12266769 B1

PDFFull Text
Date of Patent:
Apr. 01, 2025

Filed:

Dec. 08, 2023

Semiconductor device and electronic device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Junpei Momo, Kanagawa, JP;

Kazutaka Kuriki, Kanagawa, JP;

Hiromichi Godo, Kanagawa, JP;

Shunpei Yamazaki, Tokyo, JP;

Assignee:

SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken, JP;

Attorneys:

Nixon Peabody LLP

Jeffrey L. Costellia

Primary Examiner:

Jane J Rhee

Int. Cl.
CPC ...
H01M 10/46 (2006.01); A61N 1/378 (2006.01); G06F 1/16 (2006.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01M 10/052 (2010.01); H01M 10/0525 (2010.01); H01M 10/0562 (2010.01); H01M 10/0585 (2010.01); H01M 10/42 (2006.01); H01M 10/613 (2014.01); H01M 10/623 (2014.01); H02J 50/20 (2016.01);
U.S. Cl.
CPC ...
H01M 10/46 (2013.01); A61N 1/378 (2013.01); G06F 1/163 (2013.01); H01L 21/8221 (2013.01); H01L 27/0688 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1251 (2013.01); H01L 29/78651 (2013.01); H01L 29/7869 (2013.01); H01M 10/052 (2013.01); H01M 10/0525 (2013.01); H01M 10/0562 (2013.01); H01M 10/0585 (2013.01); H01M 10/425 (2013.01); H01M 10/613 (2015.04); H01M 10/623 (2015.04); H02J 50/20 (2016.02); H01M 2220/30 (2013.01); H01M 2300/0071 (2013.01);
Abstract

A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.

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