The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Sep. 11, 2019
Applicant:
Ns Materials Inc., Fukuoka, JP;
Inventors:
Akiharu Miyanaga, Fukuoka, JP;
Tetsuji Ito, Fukuoka, JP;
Assignee:
TOPPAN INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01); H01L 31/0256 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/101 (2013.01); H01L 31/0256 (2013.01); H01L 31/035218 (2013.01);
Abstract
An object is to provide an infrared sensor with a quantum dot optimized. The present invention provides an infrared sensor () including a light absorption layer () that absorbs an infrared ray, wherein the light absorption layer includes a plurality of spherical quantum dots (). Alternatively, the present invention provides an infrared sensor including a light absorption layer that absorbs an infrared ray, wherein the light absorption layer includes a plurality of quantum dots and the quantum dot includes at least one kind of PbS, PbSe, CdHgTe, AgS, AgSe, AgTe, AgInSe, AgInTe, CuInSe, CuInTe, and InAs.