The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Aug. 11, 2020
Panasonic Corporation, Osaka, JP;
PANASONIC HOLDINGS CORPORATION, Osaka, JP;
Abstract
A nitride semiconductor device includes: a substrate; a nitride semiconductor layer above the substrate; a high-resistance layer above the nitride semiconductor layer; a p-type nitride semiconductor layer above the high-resistance layer; a first opening penetrating through the p-type nitride semiconductor layer and the high-resistance layer to the nitride semiconductor layer; an electron transport layer and an electron supply layer covering an upper portion of the p-type nitride semiconductor layer and the first opening; a gate electrode above the electron supply layer; a source electrode in contact with the electron supply layer; a second opening penetrating through the electron supply layer and the electron transport layer to the p-type nitride semiconductor layer; a potential fixing electrode in contact with the p-type nitride semiconductor layer at a bottom part of the second opening; and a drain electrode.