The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Feb. 23, 2022
Fuji Electric Co., Ltd., Kanagawa, JP;
Yoshiharu Kato, Matsumoto, JP;
Yosuke Sakurai, Azumino, JP;
Seiji Noguchi, Matsumoto, JP;
Takashi Yoshimura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device comprising: a semiconductor substrate provided with a drift region; a buffer region arranged between the drift region and the lower surface, wherein a doping concentration distribution has three or more concentration peaks; and a collector region arranged between the buffer region and the lower surface, wherein the three or more concentration peaks in the buffer region include: a first concentration peak closest to the lower surface; a second concentration peak closest, next to the first concentration peak, to the lower surface, arranged 5 μm or more distant from the lower surface in the depth direction, and having a doping concentration lower than the first concentration peak, the doping concentration being less than 1.0×10/cm; and a high concentration peak arranged farther from the lower surface than the second concentration peak, and having a higher doping concentration than the second concentration peak.