The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Nov. 14, 2023
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Beom-Yong Kim, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/94 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/517 (2013.01); H01L 21/28088 (2013.01); H01L 28/60 (2013.01); H01L 29/0607 (2013.01); H01L 29/4966 (2013.01); H01L 29/94 (2013.01); H10B 12/30 (2023.02);
Abstract
A semiconductor layer stack includes a first conductive layer, a dielectric layer including a high-k material, which is formed on the first conductive layer, a second conductive layer formed on the dielectric layer, and an interface control layer formed between the dielectric layer and the second conductive layer and including a leakage blocking material, a dopant material, a high bandgap material and a high work function material.