The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Nov. 03, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Dukhyun Choe, Suwon-si, KR;
Jinseong Heo, Seoul, KR;
Taehwan Moon, Suwon-si, KR;
Sanghyun Jo, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 29/42392 (2013.01); H01L 29/78391 (2014.09); H01L 29/78618 (2013.01);
Abstract
Provided are a thin film structure, a semiconductor device including the thin film structure, and a semiconductor apparatus including the semiconductor device. The thin film structure includes a substrate, and a ferroelectric layer on the substrate. The ferroelectric layer includes a compound having fluorite structure, in which a <001> crystal direction is aligned in a normal direction of a substrate, and having an orthorhombic phase and including fluorine. The ferroelectric layer may have ferroelectricity.