The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Jan. 04, 2022
SK Hynix Inc., Gyeonggi-do, KR;
Yun Hyuck Ji, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A semiconductor device comprises: a substrate including first and second buried source/drain layers; a first nano sheet stack including first nano sheets stacked in a direction vertical to the substrate; a second nano sheet stack including second nano sheets stacked in a direction vertical to the substrate; an isolation wall disposed between the first nano sheet stack and the second nano sheet stack; first gate covering portions of the first nano sheet stack and extending in a direction vertical to the substrate; second gate covering portions of the second nano sheet stack and extending in a direction vertical to the substrate; first common source/drain layers connected to end portions of the first nano sheets and to the first buried source/drain layers; and second common source/drain layers connected to end portions of the second nano sheets and to the second buried source/drain layers.