The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Sep. 06, 2019
Applicants:
Ion Beam Services, Peynier, FR;
Cnm—csic, Barcelona, ES;
Inventors:
Assignees:
ION BEAM SERVICES, Peynier, FR;
CNM—CSIC, Barcelona, ES;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/66068 (2013.01);
Abstract
A MOSFET device arranged on a substratehaving first and second heavily-doped stripsandrespectively covered by first and second contactsand, these two strips being spaced apart by a channelthat also appears on the substrate, the channel being covered by a dielectric layer, itself surmounted by a third contact. The channelincorporates a thin filmlightly doped with dopant atoms of a same type as the channel, at the interface with the dielectric layer, the dopant atoms being distributed on both sides of the interface.