The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Dec. 29, 2021
Robert Bosch Gmbh, Stuttgart, DE;
Daniel Monteiro Diniz Reis, Esslingen Am Neckar, DE;
Frank Schatz, Kornwestheim, DE;
Mathias Mews, Reutlingen, DE;
Timo Schary, Aichtal-Neuenhaus, DE;
ROBERT BOSCH GMBH, Stuttgart, DE;
Abstract
Device and method for using a semiconductor component in which a dielectric layer is situated between a first electrode and a second electrode of the semiconductor component, defects of a first defect type being present in the dielectric layer. The method includes: operating the semiconductor component using a first voltage having a first polarity between the first electrode and the second electrode, determining whether or not a condition is met for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using a second voltage, which has a second polarity opposite the first polarity, continuing the operation of the semiconductor component using the first voltage if the condition is not met, and otherwise ending the operation of the semiconductor component using the first voltage, and operating the semiconductor component using the second voltage between the first electrode and the second electrode.