The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Apr. 20, 2022
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chang-Min Lin, Taichung, TW;
Chih-Hsuan Lin, Hsinchu, TW;
Yeh-Ning Jou, Hsinchu, TW;
Hwa-Chyi Chiou, Hsinchu, TW;
Jian-Hsing Lee, Hsinchu, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
An electrostatic discharge (ESD) protection structure including a P-type substrate, a P-type structure, an N-type buried layer, an element active region, a P-type guard ring, and an N-type structure is provided. The P-type structure is formed in the P-type substrate and serves as an electrical contact of the P-type substrate. The N-type buried layer is formed in the P-type substrate. The element active region is formed on the N-type buried layer. The P-type guard ring is formed on the N-type buried layer and surrounds the element active region. The N-type structure is formed on the N-type buried layer and disposed between the P-type guard ring and the P-type structure.