The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

May. 27, 2022
Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Shuji Hirata, Kariya, JP;

Akira Shintai, Kariya, JP;

Atsushi Munaoka, Kariya, JP;

Masahiro Matsunoshita, Kariya, JP;

Yusuke Tainaka, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); G01S 7/03 (2006.01); G01S 13/931 (2020.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01Q 1/38 (2006.01);
U.S. Cl.
CPC ...
H01L 24/32 (2013.01); G01S 7/03 (2013.01); G01S 13/931 (2013.01); H01L 23/3107 (2013.01); H01L 23/49838 (2013.01); H01L 24/73 (2013.01); H01L 2224/32058 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73203 (2013.01); H01Q 1/38 (2013.01);
Abstract

A radar device includes: a substrate including multiple high-frequency conductor layers arranged on a front surface; a semiconductor component in contact with the high-frequency conductor layers via conductive members; and an adhesive that bonds the semiconductor component to the front surface of the substrate. The semiconductor component has a bottom surface and a first side surface facing in a first direction. All the multiple high-frequency conductor layers include at least high-frequency conductor layers bending in a plane of the front surface and thereby extend, on the front surface, from inside ends facing the bottom surface to outside ends positioned in the first direction from the first side surface. The adhesive is in contact with the front surface except for the sites of the multiple high-frequency conductor layers formed and in contact with the side surfaces of the semiconductor component.


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