The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Jan. 26, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Chiang-Lin Shih, New Taipei, TW;

Shing-Yih Shih, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H10B 12/0335 (2023.02);
Abstract

A semiconductor device includes a device layer with a semiconductor element, a first dielectric layer on the device layer, a first conductive line on the device layer and surrounded by the first dielectric layer, and a second dielectric layer on the first dielectric layer and around the first conductive line. The semiconductor includes a spacer disposed on the first conductive line and abutting a sidewall of the second dielectric layer, and a first conductive via disposed on the first conductive line and the spacer. The first conductive via includes a first segment positioned over the spacer and including a first width, and a second segment positioned between the first segment the first conductive line and including a second width. The first width is larger than the second width.


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