The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Feb. 01, 2022
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/033 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0465 (2013.01); H01L 21/0337 (2013.01); H01L 29/66068 (2013.01); H01L 29/1608 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01);
Abstract
A method for manufacturing a silicon carbide semiconductor device according to the technology disclosed in the present specification includes: forming a drift layer on an upper surface of a silicon carbide semiconductor substrate; forming a hard mask on the upper surface of the drift layer by anisotropic etching; and forming a first ion-implanted region in a surface layer of the drift layer by implanting ions into the drift layer in a state in which the hard mask is formed, in which the hard mask includes a sidewall perpendicular to the upper surface of the drift layer.