The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

May. 07, 2021
Applicant:

Huazhong University of Science and Technology, Hubei, CN;

Inventors:

Huajun Sun, Hubei, CN;

Zuopai Zhou, Hubei, CN;

Li Li, Hubei, CN;

Xiangshui Miao, Hubei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06V 10/84 (2022.01); G06N 3/06 (2006.01); G06V 10/764 (2022.01); G06V 10/94 (2022.01);
U.S. Cl.
CPC ...
G06V 10/764 (2022.01); G06V 10/955 (2022.01);
Abstract

A method and a system of designing a memristor-based naive Bayes classifier and a classifier belonging to the field of information technology are provided. The method includes: constructing a naive Bayes classifier including a memristor array of M rows by 2N columns, where M is the number of classification types, and N is the number of pixels in a picture; calculating the number hof the pixel value of 0 and the number hof the pixel value of 1 in an ipixel in the jtraining sample, where j=1, 2, . . . , and M; and applying hpulses to a memristor Rin a jrow and a 2-1column to modulate the conductance of the memristor Rand applying hpulses to a memristor Rin the jrow and a 2column to modulate the conductance of the memristor R.


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