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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12265380 B1

PDFFull Text
Date of Patent:
Apr. 01, 2025

Filed:

Dec. 30, 2020

Matching process controllers for improved matching of process

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

James Robert Moyne, Canton, MI (US);

Jimmy Iskandar, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

LOWENSTEIN SANDLER LLP

Primary Examiner:

Jennifer L Norton

Int. Cl.
CPC ...
G03F 7/00 (2006.01); F27B 17/00 (2006.01); G05B 13/04 (2006.01); G05B 19/418 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H05K 3/00 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
G05B 19/41875 (2013.01); F27B 17/0025 (2013.01); G03F 7/705 (2013.01); G03F 7/70608 (2013.01); G03F 7/70616 (2013.01); G03F 7/70625 (2013.01); G03F 7/7065 (2013.01); G05B 13/04 (2013.01); H01L 21/67155 (2013.01); H01L 21/67253 (2013.01); H01L 22/20 (2013.01); H05K 3/00 (2013.01); C23C 16/00 (2013.01); G03F 7/70633 (2013.01); G03F 7/70683 (2013.01); G05B 2219/2602 (2013.01); G05B 2219/31014 (2013.01); G05B 2219/32096 (2013.01); G05B 2219/32097 (2013.01); G05B 2219/45028 (2013.01); G05B 2219/45031 (2013.01); G05B 2219/45032 (2013.01); Y02P 80/10 (2015.11); Y02P 90/02 (2015.11); Y02P 90/80 (2015.11);
Abstract

A method includes identifying first parameters of a first processing chamber of a semiconductor fabrication facility. The first parameters include first input parameters and first output parameters. The method further includes identifying second parameters of a second processing chamber of the semiconductor fabrication facility. The second parameters include second input parameters and second output parameters. The method further includes generating, by a processing device based on the first parameters and the second parameters, composite parameters comprising composite input parameters and composite output parameters. Semiconductor fabrication is based on the composite parameters.

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