The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Aug. 10, 2021
Applicant:

Indian Institute of Science, Bangalore, IN;

Inventors:

Neha Sakhuja, Bengaluru, IN;

Ravindra Kumar Jha, Bengaluru, IN;

Ranajit Sai, Bengaluru, IN;

Navakanta Bhat, Bengaluru, IN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/12 (2006.01); C23C 26/00 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
G01N 27/127 (2013.01); C23C 26/00 (2013.01); H01L 21/02628 (2013.01); H01L 29/0676 (2013.01); H01L 29/267 (2013.01);
Abstract

An example heterostructure semiconductor for sensing a gas comprises a substrate made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed; one or more 1-Dimensional (1D) components fabricated on a surface of the substrate, the 1D components comprising a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed; and a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the 1D components, wherein the 2D layer comprises compounds of the first and second metal. Method of fabrication of the heterostructure semiconductor and a chemiresistive sensor made thereof are also disclosed.


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