The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Dec. 16, 2022
Applicant:
Sumitomo Heavy Industries, Ltd., Tokyo, JP;
Inventors:
Yasuhiro Okada, Yokosuka, JP;
Masafumi Yorozu, Yokosuka, JP;
Assignee:
SUMITOMO HEAVY INDUSTRIES, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 71/04 (2006.01); B23K 26/0622 (2014.01); B23K 26/08 (2014.01); B23K 26/082 (2014.01); B23K 26/351 (2014.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01S 3/00 (2006.01); B23K 101/40 (2006.01); B23K 103/00 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
B23K 26/351 (2015.10); B23K 26/0622 (2015.10); B23K 26/0624 (2015.10); B23K 26/082 (2015.10); B23K 26/083 (2013.01); H01L 21/268 (2013.01); H01S 3/0085 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08); H01L 21/67115 (2013.01);
Abstract
A control device for controlling an annealing apparatus that performs laser annealing by causing a laser beam to be incident on a surface of a semiconductor wafer and moving a beam spot of the laser beam on the surface of the semiconductor wafer, the control device making a sweep speed of the beam spot of the laser beam faster than twice a value obtained by dividing a thermal diffusivity of the semiconductor wafer by a thickness of the semiconductor wafer.