The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Jul. 01, 2024
Applicant:

Huazhong University of Science and Technology, Hubei, CN;

Inventors:

Xiaomin Cheng, Hubei, CN;

Lijuan Cao, Hubei, CN;

Yunhao Luo, Hubei, CN;

Jiaqi Li, Hubei, CN;

Xiangshui Miao, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/861 (2023.02); H10B 63/80 (2023.02); H10N 70/24 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02);
Abstract

Disclosed is a temperature sensing and computing device and array based on TaOelectronic memristor, including a first metal layer, a function layer, and a second metal layer sequentially stacked from bottom to top; a work function of a metal material in the first metal layer is higher than a work function of a metal material in the second metal layer; the function layer is TaOmaterial; the first metal layer is grounded, and positive and negative voltages are applied to the second metal layer; in which an output current when the negative voltage is applied to the second metal layer is greater than an output current when the positive voltage of the same magnitude is applied to the second metal layer, and there is a self-rectifying effect; when the voltage of the same magnitude is applied to the second metal layer, the output current increases as a temperature increases.


Find Patent Forward Citations

Loading…