The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Jun. 15, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jaeseoung Park, Seoul, KR;
Wandon Kim, Seongnam-si, KR;
Suyoung Bae, Daegu, KR;
Dongsoo Lee, Gunpo-si, KR;
Dongsuk Shin, Suwon-si, KR;
Doyoung Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate including first and second regions, first and second active patterns provided on the first and second regions, respectively, a pair of first source/drain patterns on the first active pattern and a first channel pattern therebetween, a pair of second source/drain patterns on the second active pattern and a second channel pattern therebetween, first and second gate electrodes respectively provided on the first and second channel patterns, and first and second gate insulating layers respectively interposed between the first and second channel patterns and the first and second gate electrodes. Each of the first and second gate insulating layers includes an interface layer and a first high-k dielectric layer thereon, and the first gate insulating layer further includes a second high-k dielectric layer on the first high-k dielectric layer.