The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Aug. 18, 2022
Applicant:

Tech University of Korea Industry Academic Cooperation Foundation, Gyeonggi-do, KR;

Inventors:

Sung-Nam Lee, Incheon, KR;

Gun Woo Lee, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 45/10 (2020.01); H05B 45/20 (2020.01); H05B 45/325 (2020.01); H05B 47/10 (2020.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H05B 45/325 (2020.01); H05B 45/20 (2020.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01);
Abstract

According to one exemplary embodiment of the present disclosure, a light emitting diode system includes: a nitride-based multi-wavelength light emitting diode including a first semiconductor layer doped with an n-type material, a second semiconductor layer doped with a p-type material, and an active layer disposed between the first semiconductor layer and the second semiconductor layer and having a structure of an indium gallium nitride (InGaN)-based quantum well; and a control unit configured to adjust and apply at least one of a pulse width and a duty cycle of an injection current to the nitride-based multi-wavelength light emitting diode.


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