The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
May. 22, 2023
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Alberto Marzo, Giarret, IT;
Vincenzo Randazzo, Biancavilla, IT;
Vanni Poletto, Milan, IT;
Giovanni Susinna, Catania, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
In embodiments, a capacitance is coupled to a source of electrical charge via a drain to source current flow path through a field-effect transistor. The capacitance is pre-charged by making the field-effect transistor selectively conductive in response to the gate-source voltage of the field-effect transistor exceeding a threshold. The difference between the gate-source voltage of the field-effect transistor and the threshold provides an overdrive value of the field-effect transistor. The gate of the field-effect transistor is driven with a variable gate-source voltage having as a target maintaining a constant overdrive value. Electrical charge is controllably transferred from the source to the capacitance via the drain to source current flow path through the field-effect transistor avoiding undesirably high inrush currents.