The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Sep. 18, 2023
Rohm Co., Ltd., Kyoto, JP;
Kenichi Onodera, Kyoto, JP;
Masashi Hayashiguchi, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device includes a switching circuit that switches between conducting state and disconnected state. The switching circuit includes first and second switching elements electrically connected in parallel. The first switching element is an IGBT, and the second switching element is a MOSFET. When a current flowing in the switching circuit is less than a first current value, the second switching element has a lower voltage than the first switching element. When the current flowing in the switching circuit is not less than a second current value and not greater than a third current value, the threshold voltage of the second switching element ranges from −1.0 V to +0.4 V relative to the threshold voltage of the first switching element. The third current value is not greater than the rated current of the switching circuit. The first current value is less than the third current value.