The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Jun. 22, 2021
Applicant:

Fujifilm Business Innovation Corp., Tokyo, JP;

Inventors:

Takeshi Minamiru, Ebina, JP;

Kenichi Ono, Ebina, JP;

Satoshi Inada, Ebina, JP;

Michiaki Murata, Ebina, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/042 (2006.01); G06F 21/32 (2013.01); G06F 21/84 (2013.01); G06V 20/64 (2022.01); H01S 5/40 (2006.01); G06V 40/16 (2022.01);
U.S. Cl.
CPC ...
H01S 5/4025 (2013.01); G06F 21/32 (2013.01); G06F 21/84 (2013.01); G06V 20/653 (2022.01); G06V 40/165 (2022.01); G06V 2201/121 (2022.01);
Abstract

A light-emission device includes: a first light emitting element chip; a second light emitting element chip having a light output higher than a light output of the first light emitting element chip, the second light emitting element chip being configured to be driven independently from the first light emitting element chip and arranged side by side with the first light emitting element chip; and a light diffusion member including a first region provided on an emission path of the first light emitting element chip and a second region provided on an emission path of the second light emitting element chip, and having a diffusion angle at the second region larger than a diffusion angle at the first region.


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