The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Jan. 19, 2023
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Yasushi Koyama, Kanagawa, JP;

Noriyuki Kaifu, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 9/04 (2006.01); H01Q 1/22 (2006.01); H01Q 21/00 (2006.01); H01Q 21/06 (2006.01); H01Q 23/00 (2006.01); H03B 7/08 (2006.01);
U.S. Cl.
CPC ...
H01Q 9/045 (2013.01); H01Q 1/2283 (2013.01); H01Q 21/0075 (2013.01); H01Q 21/065 (2013.01); H01Q 23/00 (2013.01); H03B 7/08 (2013.01);
Abstract

A semiconductor element comprising: an antenna array that is provided with a plurality of antennas each including a semiconductor layer having an electromagnetic wave gain or carrier nonlinearity with respect to a terahertz wave; and a coupling line that synchronizes adjacent antennas in the antenna array with each other at a frequency of the terahertz wave, wherein the coupling line includes a plurality of first regions connected to the adjacent antennas respectively and a second region provided between the plurality of first regions, wherein the second region has impedance different from impedance of each of the first regions, and wherein the second region has a loss larger than a loss of the individual first region at a frequency other than a resonance frequency of the antenna array.


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