The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
May. 02, 2022
Andre Filipe Rodrigues Augusto, Tempe, AZ (US);
Apoorva Srinivasa, Beaverton, OR (US);
Stuart Bowden, Tempe, AZ (US);
Andre Filipe Rodrigues Augusto, Tempe, AZ (US);
Apoorva Srinivasa, Beaverton, OR (US);
Stuart Bowden, Tempe, AZ (US);
Arizona Board of Regents on behalf of Arizona State University, Scottsdale, AZ (US);
Abstract
Photovoltaic devices with very high breakdown voltages are described herein. Typical commercial silicon photovoltaic devices have breakdown voltages below 50-100 volts (V). Even though such devices have bypass diodes to prevent photovoltaic cells from going into breakdown, the bypass diodes have high failure rates, leading to unreliable devices. A high-efficiency silicon photovoltaic cell is provided with very high breakdown voltages. By combining a device architecture with very low surface recombination and silicon wafers with high bulk resistivity (above 10 ohms centimeter (Ω-cm)), embodiments described herein achieve breakdown voltages close to 1000 V. These photovoltaic cells with high breakdown voltages improve the reliability of photovoltaic devices, while reducing their design complexity and cost.