The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

May. 16, 2022
Applicants:

James A. Holmes, Fayetteville, AR (US);

Anthony M. Francis, Elkins, AR (US);

Matthew W. Barlow, Springdale, AR (US);

Nicholas J. Chiolino, Springdale, AR (US);

Sonia M. Perez, Farmington, AR (US);

Inventors:

James A. Holmes, Fayetteville, AR (US);

Anthony M. Francis, Elkins, AR (US);

Matthew W. Barlow, Springdale, AR (US);

Nicholas J. Chiolino, Springdale, AR (US);

Sonia M. Perez, Farmington, AR (US);

Assignee:

U.S. DEPARTMENT OF ENERGY, WASHINGTON, US;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01); G01J 1/42 (2006.01); H01L 31/112 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0312 (2013.01); G01J 1/429 (2013.01); H01L 31/112 (2013.01);
Abstract

An ultraviolet detecting silicon carbide junction field effect transistor with a transistor gate junction positioned proximate to the outer surface to receive ultraviolet: light and flow an ultraviolet light induced photo current when reverse biased.


Find Patent Forward Citations

Quick Actions:

Holmes, James. (2025). Ultraviolet sensors and methods using integrated silicon carbide lateral junction field-effect transistors (U.S. Patent No. 12261232). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12261232

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…