The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
May. 23, 2022
Applicant:
First Solar, Inc., Tempe, AZ (US);
Inventors:
Sachit Grover, Campbell, CA (US);
Chungho Lee, San Jose, CA (US);
Xiaoping Li, San Jose, CA (US);
Dingyuan Lu, San Jose, CA (US);
Roger Malik, Santa Clara, CA (US);
Gang Xiong, Santa Clara, CA (US);
Assignee:
First Solar, Inc., Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0296 (2006.01); H01L 31/0304 (2006.01); H01L 31/05 (2014.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02963 (2013.01); H01L 31/03044 (2013.01); H01L 31/0516 (2013.01); H01L 31/18 (2013.01); H01L 31/1828 (2013.01); H01L 31/1864 (2013.01);
Abstract
According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.