The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Jun. 11, 2021
Shenzhen Adaps Photonics Technology Co. Ltd., Shenzhen, CN;
Shenzhen Adaps Photonics Technology Co. LTD., Shenzhen, CN;
Abstract
A single-photon avalanche diode and a manufacturing method thereof, a detector array, and an image sensor are disclosed. The back-side illuminated single-photon avalanche diode is disposed with a light-trapping structure and a sidewall reflection wall. Incident light is reflected, scattered, and refracted by the light-trapping structure and then dispersed to various angles, and with the addition of the reflection effect of the sidewall reflection wall, the effective optical path of the light in the back-side illuminated single-photon avalanche diode can be extended. The manufacturing method of a back-side illuminated single-photon avalanche diode achieves the manufacturing of the back-side illuminated single-photon avalanche diode. For the photoelectric detector array and the image sensor including the back-side illuminated single-photon avalanche diode, since they have the back side illumination single-photon avalanche diode, light absorption efficiencies of the photoelectric detector array and the image sensor are effectively improved.