The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

May. 21, 2021
Applicants:

Ordos Yuansheng Optoelectronics Co., Ltd., Inner Mongolia, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Chenglong Wang, Beijing, CN;

Yezhou Fang, Beijing, CN;

Feng Li, Beijing, CN;

Lei Yao, Beijing, CN;

Lei Yan, Beijing, CN;

Kai Li, Beijing, CN;

Lin Hou, Beijing, CN;

Xiaogang Zhu, Beijing, CN;

Yun Gao, Beijing, CN;

Yanzhao Peng, Beijing, CN;

Teng Ye, Beijing, CN;

Hua Yang, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); G02B 27/01 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); G02B 27/0172 (2013.01); H01L 29/41733 (2013.01); H01L 29/78633 (2013.01);
Abstract

The present disclosure provides a thin film transistor, a display substrate and a display device, and belongs to the field of display technology. The thin film transistor of the present disclosure includes: a base, and a gate, an active layer, a source and a drain located on the base, where the gate includes a first gate and a second gate which are sequentially provided on the base and are electrically connected to each other; the active layer is located between the first gate and the second gate, and orthographic projections of the first gate and the second gate on the base are partially overlapped with an orthographic projection of the active layer on the base, and the orthographic projections of the first gate and the second gate on the base are partially overlapped with each other.


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