The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
May. 17, 2022
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventors:
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 23/544 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/78 (2013.01); H01L 23/544 (2013.01); H01L 23/585 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/5446 (2013.01);
Abstract
Provided is a semiconductor device including: a semiconductor substrate provided with an active portion and an edge termination structure portion surrounding the active portion; an interlayer dielectric film provided above the semiconductor substrate; a protective film provided above the interlayer dielectric film; and a protruding portion provided farther from the active portion than the edge termination structure portion and protruding further than the interlayer dielectric film. The protruding portion is not covered with the protective film. The protective film is provided closer to the active portion than the protruding portion.