Substrate stripping method and epitaxial wafer

Abstract

A substrate stripping method and an epitaxial wafer, relating to the technical field of semiconductors. The method comprises: providing a substrate (), the substrate () having a recess, and the recess being distributed on a first surface (a) of the substrate (); forming a hydrophilic layer () in the recess; forming, on the first surface (a), an etching sacrificial layer () covering the first surface (a), the etching sacrificial layer () and the recess defining a flowing space (A); growing an epitaxial layer () on the etching sacrificial layer (); and soaking the etching sacrificial layer () and the substrate () in an etching liquid, and corroding the etching sacrificial layer () by means of the etching liquid until the epitaxial layer () is separated from the substrate (). The method can rapidly and uniformly etch the etching sacrificial layer ().