The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Jun. 14, 2023
Applicants:
Chungang University Industry Academic Cooperation Foundation, Seoul, KR;
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Inventors:
Dong Hwan Wang, Seoul, KR;
Woong Sik Jang, Seoul, KR;
Il Jeon, Suwon-si, KR;
Kyu Sun Kim, Suwon-si, KR;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 85/50 (2023.01); H01G 9/00 (2006.01); H01G 9/20 (2006.01); H10K 85/10 (2023.01); H10K 85/20 (2023.01); H10K 85/60 (2023.01);
U.S. Cl.
CPC ...
H01G 9/2009 (2013.01); H01G 9/0036 (2013.01); H10K 85/50 (2023.02); H10K 85/111 (2023.02); H10K 85/1135 (2023.02); H10K 85/211 (2023.02); H10K 85/215 (2023.02); H10K 85/6572 (2023.02);
Abstract
Disclosed are a lead-free photodetector and a method for manufacturing the same. The lead-free photodetector includes a light-side electrode, a light-side conductive layer formed on the light-side electrode, a perovskite layer formed on the light-side conductive layer, a rear-side conductive layer formed on the perovskite layer, and a rear-side electrode formed on the rear-side conductive layer.