The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Sep. 02, 2020
Applicant:

Mitsubishi Chemical Corporation, Tokyo, JP;

Inventors:

Saki Makigawa, Tokyo, JP;

Akira Yamazaki, Tokyo, JP;

Naoko Yamada, Tokyo, JP;

Yoshiko Irie, Tokyo, JP;

Shinji Saiki, Tokyo, JP;

Masashi Uzawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/12 (2006.01); C08J 5/18 (2006.01);
U.S. Cl.
CPC ...
H01B 1/124 (2013.01); C08J 5/18 (2013.01); C08J 2300/12 (2013.01);
Abstract

The conductive film of the present invention includes a conductive polymer (A) and has a film thickness of 35 nm or less, wherein: a surface resistance of the conductive film is 1×10Ω/sq. or less, and a standard deviation of current that flows through the conductive film upon application of voltage to the conductive film is 5 or less. The conductor of the present invention has a substrate, and the conductive film provided on at least a part of the surface of the substrate. The resist pattern forming method of the present invention includes a lamination step of forming the conductive film on a surface of a resist layer including a chemically amplified resist, said resist layer formed on one surface of a substrate, and an exposure step of irradiating the substrate with an electron beam according to a pattern on its side on which the conductive film is formed. The laminate of the present invention has a resist layer and an antistatic film formed on the surface of the resist layer, wherein the antistatic film is the above-mentioned conductive film.


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