The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Nov. 07, 2022
Applicant:
National Yang Ming Chiao Tung University, Hsinchu, TW;
Inventors:
Tuo-Hung Hou, Hsinchu, TW;
Ming-Hung Wu, Hsinchu, TW;
Assignee:
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/223 (2013.01); G11C 11/2259 (2013.01); G11C 11/2273 (2013.01);
Abstract
A metallic ferroelectric metal (MFM) field effect transistor (FET) is provided that includes an MFM, a first FET and a second FET. The MFM has a first electrode. The first FET is electrically connected to the first electrode, and has a first gate electrode, wherein the first gate electrode has a first area. The second FET is electrically connected to the first electrode, and has a second gate electrode, wherein the second gate electrode has a second area, and the first area and the second area have a ratio therebetween ranging from 1:50 to 1:2.